2011. 1. 12 1/8 semiconductor technical data KGT30N120NDH revision no : 0 general description kec npt igbts offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as ih(induction heating), microwave oven, etc. features h high speed switching h high system efficiency h soft current turn-off waveforms h extremely enhanced avalanche capability maximum rating (ta=25 ? ) *repetitive rating : pulse width limited by max. junction temperature g c e characteristic symbol rating unit collector-emitter voltage v ces 1200 v gate-emitter voltage v ges ? 20 v collector current @tc=25 ? i c 50 a @tc=100 ? 30 a pulsed collector current i cm * 90 a diode continuous forward current @tc=100 ? i f 30 a diode maximum forward current i fm 150 a maximum power dissipation @tc=25 ? p d 310 w @tc=100 ? 125 w maximum junction temperature t j 150 ? storage temperature range t stg -55 to + 150 ? characteristic symbol max. unit thermal resistance, junction to case (igbt) r t h jc 0.4 ? /w thermal resistance, junction to case (diode) r t h jc 2.8 ? /w thermal resistance, junction to ambient r t h ja 40 ? /w thermal characteristic e c g xa()x7 4 q + k x z 6 * j a 7 + 77 k x 4 k 7 6 q z *vbv5gggg5bj5 jb55gggg5bj5 *b55gggg5bj5 ab55gggg5bj5 abu5gggg5bj5 abm5gggg5bj5 *abv5gggg5bj5 *jblogggg5bj5 jaby5gggg5bj5 *bms5b*mx5b5m *obm5gggg5ba5 *by5gggg5bj5 *abo5gggg5bj5 vbo5gggg5bj5 mbymgggg5ba5 *bgq+7 jbg474 abg77 5bo5s5b*mx5b5m *mbo5gggg5bj5 s ybu5gggg5bj5 s s s s s s s s s s s s s s s abj5gggg5b*5 s *ubl5gggg5bj5 s
2011. 1. 12 2/8 KGT30N120NDH revision no : 0 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static collector-emitter breakdown voltage bv ces v ge =0v , i c =1ma 1200 - - v collector cut-off current i ces v ge =0v, v ce =1200v - - 1.0 ma gate leakage current i ges v ce =0v, v ge = ? 20v - - ? 100 na gate threshold voltage v ge(th) v ge =v ce, i c =25ma 4.0 5.5 7.0 v collector-emitter saturation voltage v ce(sat) v ge =15v, i c =30a - 1.95 2.30 v v ge =15v, i c =30a, t c = 125 ? - 2.25 - v v ge =15v, i c =60a - 2.50 - v dynamic total gate charge q g v cc =600v, v ge =15v, i c = 30a - 200 300 nc gate-emitter charge q ge - 20 - nc gate-collector charge q gc - 80 - nc turn-on delay time t d(on) v cc =600v, i c =30a, v ge =15v,r g =10 ? inductive load, t c = 25 ? - 75 - ns rise time t r - 45 - ns turn-off delay time t d(off) - 320 - ns fall time t f - 95 - ns turn-on switching loss e on - 4.7 6.5 mj turn-off switching loss e off - 1.15 1.5 mj total switching loss e ts - 5.85 8.0 mj turn-on delay time t d(on) v cc =600v, i c =30a, v ge =15v, r g =10 ? inductive load, t c = 125 ? - 70 - ns rise time t r - 45 - ns turn-off delay time t d(off) - 340 - ns fall time t f - 140 - ns turn-on switching loss e on - 5.2 6.5 mj turn-off switching loss e off - 1.8 2.3 mj total switching loss e ts - 7.0 8.8 mj input capacitance c ies v ce =30v, v ge =0v, f=1mhz - 3100 - pf ouput capacitance c oes - 100 - pf reverse transfer capacitance c res - 80 - pf
2011. 1. 12 3/8 KGT30N120NDH revision no : 0 electrical characteristic of diode characteristic symbol test condition min. typ. max. unit diode forward voltage v f i f = 30a t c =25 ? - 1.9 2.5 v t c =125 ? - 2.05 - diode reverse recovery time t rr i f = 30a di/dt = 200a/ s t c =25 ? - 250 330 ns t c =125 ? - 320 - diode peak reverse recovery current i rr t c =25 ? - 29 35 a t c =125 ? - 33 - diode reverse recovery charge q rr t c =25 ? - 3200 4700 nc t c =125 ? - 4750 -
2011. 1. 12 4/8 KGT30N120NDH revision no : 0 fig 1. saturation voltage characteristics collector - emitter voltage v ce (v) collector - emitter voltage v ce (v) collector - emitter voltage v ce (v) 45 23 1 0 collector current i c (a) collector - emitter voltage v ce (v) gate - emitter voltage v ge (v) collector current i c (a) 0 20 16 12 4 8 08 20 41216 0246810 0 20 40 60 80 100 120 140 160 180 40 20 80 100 60 0 25 50 2.0 1.5 2.5 3.0 75 100 125 case temperature t c ( ) c 1 10 40 capacitance (pf) 0 500 3000 2500 4000 4500 5000 3500 1000 1500 2000 common emitter v ge = 15v t c = t c = fig 2. saturation voltage characteristics fig 3. saturation voltage vs. case temperature fig 4. saturation voltage vs. v ge fig 5. saturation voltage vs. v ge fig 6. capacitance characteristics 25 c 125 c common emitter v ge = 15v 15v 6v 12v 8v 10v i c = 30a 50a common emitter t c = 25 c i c = 15a 30a 50a collector - emitter voltage v ce (v) gate - emitter voltage v ge (v) collector - emitter voltage v ce (v) 0 20 16 12 4 8 08 20 41216 common emitter t c = 125 c common emitter v ge = 0v, f = 1mhz t c = 25 c i c = 15a 30a 50a ciss coss crss t c =25 c common emitter typical performance characteristics
2011. 1. 12 5/8 KGT30N120NDH revision no : 0 collector current i c ( ) switching time (ns) 020 40 30 50 100 10 common emitter v ge = 15v, r g = 10 ? t c = t c = 25 c 125 c tr td(on) fig 10. turn-on characteristics vs. collector curren t collector current i c ( ) switching time (ns) common emitter v ge = 15v, r g = 10 ? t c = t c = 25 c 125 c tf td(off) fig 11. turn-off characteristics vs. collector current gate resistance r g ( ? ) switching loss (mj) fig 9. switching loss vs. gate resistance collector current i c ( ) switching loss (mj) 010 30 20 40 50 0.1 10.0 1.0 common emitter v ge = 15v, r g = 10 ? t c = t c = 25 c 125 c fig 12. switching loss vs. collector current eoff eon eoff eon fig 7. turn-on characteristics vs. gate resistance gate resistance r g ( ? ) gate resistance r g ( ? ) switching time (ns) switching time (ns) 0 204060 10 30 50 70 10 100 25 common emitter v cc = 600v, v ge = 15v i c = 30a t c = t c = c 125 c tr td(on) 0204060 10 30 50 70 10 100 1000 25 common emitter v cc = 600v, v ge = 15v i c = 30a t c = t c = c 125 c tf td(off) fig 8. turn-off characteristics vs. gate resistance 0204060 10 30 50 70 0.1 1 10 25 common emitter v cc = 600v, v ge = 15v i c = 30a t c = t c = c 125 c 02040 10 30 50 10 100 1000 typical performance characteristics (continued)
2011. 1. 12 6/8 KGT30N120NDH revision no : 0 fig 13. gate charge characteristics gate charge q g ( nc ) gate-emitter voitage v ge (v) 0 80 160 40 120 60 140 20 100 200 180 0 2 4 6 8 10 12 14 16 common emitter r l = 20 ? t c = 25 c turn-off safe operating area v ge = 15v, t c = 125 c fig 14. soa characteristics 1 100 10 1000 1 10 100 fig 15. turn-off soa fig 16. transient thermal impedance of igbt 400v 600v vcc = 200v rectan g ular pulse duration (sec) 10.000 1.000 1e-5 1e-4 1e-3 1e-2 1e-1 1e+00 1e+01 thermal resistance (zthjc) 0.010 0.001 0.100 1. duty factor d=t1/t2 2. peak tj = pdm zthjc + t c t 1 t 2 p dm collector current i c (a) collector-emitter voltage v ce (v) collector current i c (a) collector-emitter voltage v ce (v) 1.00 1 0.01 0.10 0.1 10.00 100.00 10 100 1000 1ms 200 s dc operation 50 s single pluse 0.01 0.02 0.1 0.2 0.5 0.05 single nonrepetitive pulse t c = 25 curves must be derated linearly with increase in temperature c 10ms typical performance characteristics (continued)
2011. 1. 12 7/8 KGT30N120NDH revision no : 0 fig 17. forward characteristics forward voltage v f (v) forward current i f (a) forward current i f (a) reverse recovery current i rrm (a) reverse recovery time t rr (ns) forward current i f (a) 01020 515 30 25 0 20 25 30 15 5 10 fig 18. reverse recovery current fig 19. reverse recovery time di/dt=100a/ s di/dt=200a/ s 01020 515 30 25 0 400 300 100 200 0 0.4 1.2 1.6 2.0 0.8 2.4 0.1 10 50 1 t c = t c = 25 c 125 c t c = 25 c t c = 125 c di/dt=200a/ s di/dt=100a/ s typical performance characteristics
2011. 1. 12 8/8 KGT30N120NDH revision no : 0 definition switching time & loss.
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